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Advanced Technical Information
CoolMOS ? 1) Power MOSFET
Electrically isolated back surface
2500 V electrical isolation
N-Channel Enhancement Mode
IXKR 47N60C5
V DSS = 600 V
I D25 = 47 A
R DS(on) max = 45 m Ω
Low R DSon , high V DSS MOSFET
Ultra low gate charge
G
D
ISOPLUS247 TM
G
D
isolated back
MOSFET
S
E72873
Features
S
surface
Symbol
V DSS
Conditions
T VJ = 25°C
Maximum Ratings
600 V
? Silicon chip on Direct-Copper-Bond
substrate
- high power dissipation
V GS
± 20
V
- isolated mounting surface
I D25
I D90
T C = 25°C
T C = 90°C
47
32
A
A
- 2500 V electrical isolation
- low drain to tab capacitance (< 30 pF)
? Fast CoolMOS ? 1) power MOSFET 4 th
E AS
E AR
single pulse
repetitive
I D = 11 A; T C = 25°C
1950
3
mJ
mJ
generation
- high blocking capability
dV/dt
MOSFET dV/dt ruggedness V DS = 0...480 V
50
V/ns
- lowest resistance
- avalanche rated for unclamped
inductive switching (UIS)
- low thermal resistance
Symbol
wiConditions
Characteristic Values
(T VJ = 25 ° C, unless otherwise speci?ed)
due to reduced chip thickness
? Enhanced total power density
min.
typ.
max.
Applications
R DSon
V GS = 10 V; I D = 44 A
40
45
m Ω
? Switched mode power supplies
V GS(th)
I DSS
V DS = V GS ; I D = 3 mA
V DS = V DSS ; V GS = 0 V
T VJ = 25°C
T VJ = 150°C
2.5
3
50
3.5
10
V
μA
μA
(SMPS)
? Uninterruptible power supplies (UPS)
? Power factor correction (PFC)
? Welding
I GSS
C iss
C oss
V GS = ± 20 V; V DS = 0 V
V GS = 0 V; V DS = 100 V
f = 1 MHz
6800
320
100
nA
pF
pF
? Inductive heating
? PDP and LCD adapter
Advantages
Q g
Q gs
Q gd
t d(on)
t r
t d(off)
t f
R thJC
R thCH
V GS = 0 to 10 V; V DS = 400 V; I D = 44 A
V GS = 10 V; V DS = 400 V
I D = 44 A; R G = 3.3 Ω
with heatsink compound
150
35
50
30
20
100
10
0.25
190
0.45
nC
nC
nC
ns
ns
ns
ns
K/W
K/W
? Easy assembly:
no screws or isolation foils required
? Space savings
? High power density
? High reliability
1)
CoolMOS ? is a trademark of
In?neon Technologies AG.
IXYS reserves the right to change limits, test conditions and dimensions.
? 2008 IXYS All rights reserved
20080523b
1-4
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